MBR540 features * metal of silicon rectifier, majority carrier conducton * guard ring for transient protection * low power loss, high efficiency * high current capability, low v f * high surge capacity * for use in low voltage, high frequency inverters, free whelling, and polarity protection applications mechanical data * case: to-220ac molded plastic * polarity: as marked on the body * weight: 2 grams * mounting position: any dim. a b c d e f g h j k l m n q milimeter min. max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 - 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 inches min. max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 - 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 dimensions to-220ac c a MBR540 v rrm v 40 v rms v 28 v dc v 40 a=anode, c=cathode, tab=cathode symbol characteristics i (av) maximum average forward rectified current @t c =95 c i fsm peak forward surge current 8.3ms single half-sine-wave superimposed on rated load (jedec method) maximum forward voltage at 5.0a dc (note 1) v f i r maximum dc reverse current at rated dc blocking voltage @t j =25 c @t j =125 c c j typical junction capacitance (note 2) t stg storage temperature range maximum ratings 5 175 0.55 0.5 33 350 -55 to +150 a a v unit ma pf o o o c o notes: 1. 300us pulse width, 2% duty cycle. 2. measured at 1.0mhz and applied reverse voltage of 4.0v dc. 3. thermal resistance junction to case. typical thermal resistance (note 3) 3.5 r ojc c/w o t j operating temperature range -55 to +125 c o high tjm low irrm schottky barrier dioeds * rohs compliant a c p1 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
MBR540 f ig.2 - ma x i mum no n - re p e t i t i v e s u r g e cu r r e n t n u m b e r of cy cl es a t 60 hz p e a k f o r w ard s u r g e curr e n t , am peres 1 5 10 50 10 0 2 20 0 50 10 0 15 0 20 0 25 0 30 0 f i g . 1 - f o r w ar d cu rr e n t de r a t i ng c u r v e avera g e f o r w a r d c u r r e n t a m p e r e s 25 75 100 1 2 5 1 50 1 0 50 4 17 5 case t e m pera t u r e , c 8 . 3 m s sin g le ha lf - s in e - w a ve ( j e d e c me t h o d ) 3 0 2 r e s i s t i ve o r i n d u c t i ve l o ad i n st a n t a neo u s f o rw ard vo l t a g e , vo l t s f ig.4 - t y p i c a l f o r w a rd cha r a ct e r i s t i cs i n s t a n t a neous f o rw ard c u r r e n t ,( a ) 0. 2 0 . 3 0. 7 0. 8 1. 0 10 100 0. 4 0 . 5 0 . 6 0. 1 1. 0 0. 9 p u ls e w i d t h 3 0 0u a i n st a n t a neo u s f o rw ard vo l t a g e , vo l t s f ig.4 - t y p i c a l f o r w a rd cha r a ct e r i s t i cs i n s t a n t a neous f o rw ard c u r r e n t ,( a ) 0. 1 1. 0 10 100 0. 1 p u ls e w i d t h 3 0 0u s 2 % d u ty c y c l e t j = 25 c 5 p e r c e n t o f ra t e d peak reverse vo l t a g e ,(%) f ig.3 - t y p i c a l rever s e cha r a c t eris t i cs i n st an t a n e o u s r e v e r s e cu rr e n t , ( ma ) 20 40 12 0 14 0 0 0. 0 1 1. 0 10 10 0 0 10 0 60 80 1 0 0 t j = 100 c 0. 1 t j = 25 c t j = 7 5 c f ig.5 - t ypical junct i o n capacit ance ca pa cit a n c e , ( p f ) re ve rs e vo l t a g e , v o l t s 10 1 10 0 10 0 0 0 1000 10 0 0. 1 4 t j = 25 c , f = 1mh z high tjm low irrm schottky barrier diodes p2 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
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